Date of Award

2016-01-01

Degree Name

Master of Science

Department

Electrical Engineering

Advisor(s)

Anupama B. Kaul

Abstract

The miniaturization of electronic devices according to Moore's Law has been propelled by the continuous demand for faster and smaller devices which continue to advance technology. One recent contribution to this trend was the isolation and characterization of one atom thick of graphite, known as graphene, which led to the Nobel Prize in physics in 2010 being awarded to Andre Geim and Konstantin Novoselov. Graphene and its related nanocarbon derivatives have exceptional mechanical, thermal, optical and electronic properties, making them a potential candidate for electronics and optoelectronics applications. However, this material has no intrinsic bandgap and complicated processes are required to open up a bandgap in graphene to make it attractive for semiconductor device applications. Nevertheless, the body of work on graphene has enabled researchers to investigate a new family of non-carbon based layered materials with a wide variety of compositions. Given that these 2D layered materials include, semiconductors, insulators, and semimetals, their potential applications include devices such as transistors, integrated circuits, sensors, solar cells, flexible electronics, and optical devices. Therefore, 2D materials is a multidisciplinary research area for their synThesis, characterization, simulation, and implementation. Moreover, a subcategory of 2D materials that have attracted significant attention are the TMDCs (Transition Metal Di-Chalcogenides). In addition, among this subcategory, the 2D semiconductor that has involved special interest since the demonstration of high performance for electronic and optoelectronic applications is molybdenum disulfide (MoS2), the focus of this research. In this work, we have developed a process for the vapor phase synThesis of single-layer MoS2. These process parameters have been analyzed in detail and the samples obtained have been characterized using Raman spectroscopy and Atomic Force Microscope. Following on from this synThesis work, we have developed a fabrication process to integrate few-layered MoS2 for electronic and opto-electronic device applications.

Language

en

Provenance

Received from ProQuest

File Size

80 pages

File Format

application/pdf

Rights Holder

Gustavo Alberto Lara Saenz

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