Date of Award
2026-08-01
Degree Name
Master of Science
Department
Electrical and Computer Engineering
Advisor(s)
David Zubia
Abstract
Gallium nitride (GaN) devices are important for high-power, high-frequency, and harsh-environment applications because of their wide bandgap, high breakdown capability, and electrical performance. This thesis focuses on the electrical characterization of GaN-based devices using laboratory measurements, analytical modeling, and TCAD simulation. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on a GaN Schottky diode. The measured data were analyzed to extract key parameters such as ideality factor, Schottky barrier height, series resistance, donor concentration, built-in potential, depletion width, and maximum electric field. A TCAD process was also developed in Synopsys Sentaurus to recreate the main geometry, layer structure, contacts, and doping profile of the GaN Schottky diode. Overall, this work provides a comparison between experimental measurements, analytical parameter extraction, and TCAD simulation. Additionally, it serves as a useful methodology for future semiconductor research and education at UTEP.
Language
en
Provenance
Received from ProQuest
Copyright Date
2026-08
File Size
88 p.
File Format
application/pdf
Rights Holder
Sebastian Alessandro Mimbela
Recommended Citation
Mimbela, Sebastian Alessandro, "Electrical Characterization of Wide-Bandgap Devices via Laboratory Measurements, TCAD Simulation, and Analytical Modeling" (2026). Open Access Theses & Dissertations. 4733.
https://scholarworks.utep.edu/open_etd/4733