Date of Award

2025-08-01

Degree Name

Master of Science

Department

Engineering

Advisor(s)

Brian Schuster

Abstract

Gallium nitride's (GaN) mechanical characterization is essential for evaluating its performance and long-term dependability, especially when subjected to mechanical stress and irradiation. The design and optimization of GaN-based devices, which are extensively employed in high-power electronics and optoelectronics, depend on an understanding of these characteristics. Mechanical characterization allows for the evaluation of key characteristics, including stress distributions, representing the spatial variation of internal stresses under applied loading, and pop-in events, which correspond to abrupt displacements associated with the onset of dislocation nucleation and slip. These features are essential for understanding the anisotropic (direction-dependent) response of the material to external forces and environmental conditions. Additionally, the use of GaN in harsh environments, such as those exposed to radiation, can lead to degradation, which may affect its structural integrity and functionality. Through the examination of load-displacement responses acquired using a spherical indenter, the mechanical characteristics of gallium nitride wafers with c-plane (0001) and m-plane (10-10) orientations are examined in this work. A useful method for assessing important mechanical traits like hardness, elastic modulus, and plastic deformation behavior is spherical indentation, which offers a more even stress distribution than sharp indenters. By utilizing this technique, the research aims to enhance the understanding of orientation-dependent mechanical behavior, emphasizing the variations in elastic and plastic responses that are essential for maximizing performance in a range of applications, particularly those where directional properties are significant.

Language

en

Provenance

Received from ProQuest

File Size

73 p.

File Format

application/pdf

Rights Holder

Daniela Alejandra Duarte

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