Installation and development of VLSI nanotechnology computer simulation capability
Abstract
Simulation of microelectronic processes plays a pivotal role in area of Very Large Scale Integration (VLSI) by providing precise and accurate values of various parameters of a nano-device, before its actual fabrication. This report focuses on the simulation software, Integrated Systems Engineering-Technology Computer Aided Design (ISE-TCAD, version 8.0). The graphical user interface, GENESISe, of this software has been discussed followed by the process and device simulation tools, which are explained with the help of a 100nm MOSFET. The 100nm MOSFET process was developed using various tools available in this software. This report also presents some of the simulation activities designed for a VLSI nanotechnology class to help students learn this software quickly and easily. A list of future works has also been proposed, which if implemented, will ensure the usage of this software in the best possible manner.
Subject Area
Computer science|Electrical engineering
Recommended Citation
Chaganty, Rangasai Venkata, "Installation and development of VLSI nanotechnology computer simulation capability" (2003). ETD Collection for University of Texas, El Paso. AAIEP10531.
https://scholarworks.utep.edu/dissertations/AAIEP10531
