Date of Award


Degree Name

Master of Science


Electrical Engineering


David Zubia


Fabrication of semiconductor technology grows in importance every year, from metal-oxide-semiconductor (MOS) technology to fabricating integrated circuits (ICs) used in everyday life. These ICs are implemented into computers, phones, and vehicles for complex functions and safety features. Another semiconductor technology is microelectromechanical systems (MEMS), located in actuators and sensors on multiple systems. In academia, it is inherently essential for students to learn the theory of such devices and have exposure to the fabrication process of the technology in question. The importance of theory and practice in fabrication is skyrocketing due to the global chip shortage, making workforce development vital for the nation's economic security. However, process drift is a common issue in fabrication facilities, affecting the throughput of MOS and MEMS devices in university cleanrooms.In this research, theoretical models, and technology computer-aided design (TCAD) simulations are used to analyze the relationship between input parameters and changes on the semiconductor. By modularizing the complementary metal-oxide-semiconductor (CMOS) process used at UTEPâ??s cleanroom, it was possible to analyze each step in the fabrication process as an independent system or module. Before experimenting inside the cleanroom, some insight was gathered by simulating the oxidation of a semiconductor under different parameters. Some parameters were assumed in the simulation for an initial estimate. In the cleanroom, these parameters could be better observed when setting up the experiments to oxidize multiple silicon samples. Afterwards, these parameters were updated in the simulation so that a better prediction could be made through before executing the next experiments. This method proved useful for documenting the module and monitoring any process drift in the future. If this method of calibration is applied to the rest of the modules, it is possible to create a well ordered fabrication process that will enable easy and early identification of process drift within the fabrication life of MOS and MEMS devices.




Received from ProQuest

File Size

65 p.

File Format


Rights Holder

Andres Sagredo

Included in

Engineering Commons