Date of Award


Degree Name

Master of Science


Electrical Engineering


Ramana V. Chintalapalle


Gallium Oxide thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 oC) and under variable deposition time. The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts ≥ 500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-700 oC. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25-800 oC for samples deposited for 30 minutes and it varied from 4.98 eV to 5.09 eV for a variation in Ts in range of 400-800 oC. A relationship between microstructure and optical property is discussed.




Received from ProQuest

File Size

67 pages

File Format


Rights Holder

Sampath Kumar Samala