CMOS RF front-end design of a very narrowband transceiver with 0.18-μm
The challenge of designing very-narrowband RF circuits is due to the very high selectivity of bandwidth and noises. If a channel is right at 2.4 GHz with a 1 kHz bandwidth, the Q-value is equal to 2.4E+6. In order to modulate the data with a very high Q-value, the data can't be up converted once with 2.4 GHz carrier signal; indeed, the data has been up-converted 3 times to reach to 2.4 GHz. Also, the noises, especially the phase noise, extend the modulated bandwidth. Therefore, the LC-resonated low-noise amplifiers, high-Q local oscillators, and LC-resonated Gilbert cell mixers are adopted into VNBRF circuits. In this paper, the RF front-end IC design has focused on the high-Q inductors, layout, and tuned low-noise-amplifier. The TSMC 0.18um process is adopted and the power dissipation around 55mW with 1.8 Volt power supply is expected.
Chen, Chih-Hung, "CMOS RF front-end design of a very narrowband transceiver with 0.18-μm" (2008). ETD Collection for University of Texas, El Paso. AAI1456744.